K4RAH086VP-BCWM vs K4RBH086VB-BCQK Comparison
Detailed side-by-side comparison of K4RAH086VP-BCWM by Samsung Electronics and K4RBH086VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VP-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Data Rate | 5600 Mbps/pin | 4800 Mbps |
| Supply Voltage | 1.1 V | — |
| Interface | Parallel | DDR5 (CA bus, ODECC) |
| Technology | DRAM DDR5 | — |
| Memory Format | DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Package | [DATA_NEEDED: exact FBGA package code and body size] | FBGA-82 |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tray | [DATA_NEEDED: tray or tape and reel standard quantity] |
| Application Segment | Industrial | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Lifecycle Status | Active | — |
| RoHS Status | unknown | Compliant |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Density | — | 16 Gb |
| Organization | — | 2G x 8 |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |