K4RAH165VP-BCWM vs PDRQL8KCBF12-00 Comparison
Detailed side-by-side comparison of K4RAH165VP-BCWM by Samsung Electronics and PDRQL8KCBF12-00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH165VP-BCWM - 16Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung
K4RAH165VP-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH165VP-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.61 | $18.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organization | 1G x 16 | 2G x 8 |
| Data Rate | 5600 Mbps | 7200 MT/s |
| Supply Voltage | 1.1 V | 1.1 V |
| Package | FBGA-106 | FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Interface | DDR5 (Double Data Rate 5) | Pseudo-differential DQ |
| Generation | DDR5, 16Gb B-die family | — |
| RoHS Status | Compliant | Compliant |
| Access Type | Synchronous, DLL enabled mode | — |
| Application Class | Mobile, tablet, consumer electronics DRAM | — |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |