K4RAH165VP-BCWM vs PDRQL8KCBF12-00 对比
详细并排对比 K4RAH165VP-BCWM 出自 Samsung Electronics 和 PDRQL8KCBF12-00 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH165VP-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.61 | $18.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 1G x 16 | 2G x 8 |
| 数据速率 | 5600 Mbps | 7200 MT/s |
| 电源电压 | 1.1 V | 1.1 V |
| 封装 | FBGA-106 | FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| 接口 | DDR5 (Double Data Rate 5) | Pseudo-differential DQ |
| Generation | DDR5, 16Gb B-die family | — |
| RoHS 状态 | Compliant | Compliant |
| Access Type | Synchronous, DLL enabled mode | — |
| Application Class | Mobile, tablet, consumer electronics DRAM | — |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |