K4RBH086VB-BCWM vs K4RHE165VB-BCWM Comparison
Detailed side-by-side comparison of K4RBH086VB-BCWM by Samsung Electronics and K4RHE165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RBH086VB-BCWM - DDR5 16Gb DRAM 2Gx8 FBGA-82 | Samsung
K4RBH086VB-BCWM ✓ ActiveSamsung Electronics
K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung
K4RHE165VB-BCWM ✓ ActiveSpecification Comparison
| Parameter | K4RBH086VB-BCWM | K4RHE165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 24 Gb (3 GB) |
| Organization | 2G x 8 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V |
| Data Rate | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] | 5600 Mbps |
| Interface | Parallel, DDR5 | DDR5 (parallel, DDR) |
| Package | 82-FBGA | 106 FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Operating Temperature | 0 C to 85 C | 0 to 85 C |
| Product Status | Mass Production | Mass Production |
| Memory Format | Volatile (DRAM) | — |
| Technology | DDR5 SDRAM | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| On-Die ECC | Yes (per JEDEC DDR5 specification) | — |
| Access Type | — | Synchronous |
| Clock Rate (nominal) | — | 2800 MHz (5600 MT/s DDR) |
| Ball Count | — | 106 |
| Standard Pack Quantity | — | [DATA_NEEDED: Standard Pack Quantity] |