K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung
MPN: K4RCH046VM-2CCM ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K4RCH046VM-2CCM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RHE165VB-BCWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K4RHE086VB-BCWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$7.65 / Unit
View Datasheet →K4RAH165VP-BCWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$8.34 / Unit
View Datasheet →K4RCH046VM-2CCM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 32 Gb |
| Organization | 4G x 4 |
| Data Rate | 5600 Mbps |
| Supply Voltage | 1.1 V |
| Operating Temperature | 0 to 85 C |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Product Status | Sample |
K4RCH046VM-2CCM 78-ball fbga Pin Configuration Guide
Complete pinout information for K4RCH046VM-2CCM (78-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RCH046VM-2CCM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RCH046VM-2CCM is suitable for 6 applications: DDR5 Server RDIMM Memory Modules, Workstation and Desktop PC Main Memory, Networking and Communication Equipment, AI Accelerator and GPU Companion Memory, Industrial Computing and Edge Servers, Consumer Electronics and Smart Home Hubs.
DDR5 Server RDIMM Memory Modules
The K4RCH046VM-2CCM fits server RDIMM designs because its x4 organization is the standard choice for ECC-protected server memory, where the memory controller corrects errors per bit lane across nine chips per rank. Its 5600 Mbps data rate supports modern Xeon and EPYC memory subsystems, and the 1.1 V rail keeps per-DIMM power within RDIMM thermal budgets. On the module, the chip connects to the register clock driver (RCD) and the on-DIMM PMIC that converts 12 V or 5 V to the 1.1 V core rail. The trade-off is that Sample-status silicon requires qualification runs before production commitments, so server OEMs should validate across corner temperature (0 to 85 C) and voltage margins during design-in.
Recommended
Workstation and Desktop PC Main Memory
High-end desktop platforms with DDR5 memory controllers benefit from the K4RCH046VM-2CCM's 5600 Mbps rate, which supports dual-channel and multi-channel configurations delivering over 80 GB/s per channel at DDR5-5600 class timings. The 1.1 V operation lowers UDIMM power versus DDR4's 1.2 V, aiding thermals in compact chassis. In a consumer module the chip operates with the on-DIMM 5 V PMIC (such as the RA229801 class regulators), and x4 parts are typically used in workstation error-correcting configurations rather than non-ECC consumer DIMMs. Designers should confirm platform QVL support, because Sample-status memory may lack final SPD programming and speed-bin binning data published for production parts.
Recommended
Networking and Communication Equipment
Switches, routers, and 5G baseband cards use high-bandwidth DRAM for packet buffering, flow tables, and deep packet inspection. The K4RCH046VM-2CCM's 5600 Mbps interface provides the random-access bandwidth that line-card processors and network processors require, while its 32Gb density consolidates buffering into fewer chips, reducing BOM count and board area versus DDR3-generation designs. The 1.1 V supply lowers continuous power draw in always-on telecom equipment where every watt affects fan and PSU sizing. Because networking gear runs 24/7, designers should derate against the 85 C commercial ceiling and verify refresh behavior (tREFI/tREFI adjustments) at sustained high temperature in the system thermal profile before committing to the sample-phase part.
Recommended
AI Accelerator and GPU Companion Memory
AI inference cards and accelerator boards pair HBM with a DDR5 pool for weight offload, KV-cache spillover, and host-visible buffers. The K4RCH046VM-2CCM's 4G x 4 organization suits ECC-protected pooling, and 5600 Mbps operation supplies tens of GB/s of streaming bandwidth that complements HBM's peak rates at a fraction of the cost per gigabyte. The 1.1 V rail integrates cleanly with accelerator board power trees that already generate low-voltage silicon rails. Designers should note that x4 DDR5 requires controller-side ECC to realize full reliability, and that Sample-status qualification data (e.g., final speed-bin yields) should be confirmed with Samsung before ramping accelerator production volumes.
Recommended
Industrial Computing and Edge Servers
Edge servers, industrial PCs, and factory automation controllers increasingly adopt DDR5 for its bandwidth and power efficiency. The K4RCH046VM-2CCM provides 32Gb per chip, letting compact edge motherboards reach 16 GB to 64 GB with a handful of components, preserving board area for I/O and security silicon. Its 1.1 V operation reduces heat in fanless or sealed enclosures, though the 0 to 85 C commercial range means extended-temperature (down to -40 C) deployments need an industrial-grade DDR5 variant or thermal management to keep the DRAM junction within spec. The x4 organization supports the lockstep or ECC modes common in industrial controllers, improving uptime in unattended remote installations.
Recommended
Consumer Electronics and Smart Home Hubs
Premium smart-home hubs, NAS devices, and media servers use DDR5-class memory for multi-stream video transcoding and on-device AI. The K4RCH046VM-2CCM's 5600 Mbps bandwidth sustains multiple 4K streams and local AI models, while its 32Gb density allows single-chip memory configurations that shrink main-board area in compact enclosures. The 1.1 V supply supports energy-efficiency targets such as Energy Star idle-power limits. Consumer designs should note the part's Sample status and commercial 0 to 85 C range: volume consumer programs should request production-status roadmap commitments from Samsung, and enclosures must keep DRAM ambient below 85 C during sustained transcoding workloads.
Recommended
Recommended Products Summary
Engineering reference data for K4RCH046VM-2CCM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RHE165VB-BCWM | K4RHE086VB-BCWM | K4RAH165VP-BCWM |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 78-ball FBGA | 78-ball FBGA family (verify exact ball map) | 78-ball FBGA family (verify exact ball map) | 78-ball FBGA family (verify exact ball map) |
| Memory Generation | DDR5 | DDR5 | DDR5 | DDR5 |
| Density | 32 Gb | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Organization | 4G x 4 | x16 (2G x 16, per part-number decode) | x8 (4G x 8, per part-number decode) | x16 (per part-number decode) |
| Data Rate | 5600 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.1 V | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) | 1.1 V (DDR5 standard) |
| Operating Temperature | 0 to 85 C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Product Status | Sample | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- x4 organization maximizes ECC-protected configurations (vs K4RHE165VB-BCWM)
- 32Gb density doubles per-chip capacity versus 16Gb DDR5 (vs K4RHE086VB-BCWM)
- DDR5 power efficiency at 1.1 V (vs K4A8G085WB (DDR4))
Design Notes
DDR5 requires a dedicated 1.1 V PMIC; per the DDR5 standard the power management IC typically resides on the memory module converting 5 V to the core rail with I2C/I3C telemetry for host-side monitoring. Provide low-ESR bulk capacitance near the DRAM VDD balls and follow Samsung's DDR5 layout guideline for VDDQ decoupling. Because the K4RCH046VM-2CCM is at Sample status, confirm final IDD specs in the production datasheet before closing the power budget - estimated derating of 10-15% on early IDD figures is a common precaution.
At 5600 Mbps, DDR5 DQ and DQS traces require controlled impedance (JEDEC ODT settings per the controller vendor), length matching within spec skew windows, and reference-plane continuity under every signal group. Route fly-by command/address with the DDR5 topology and apply the read/write leveling training defined by the memory controller. Simulate eye diagrams at the fastest speed bin and at corner voltage (1.1 V +/-5%) before tape-out of a new DIMM or board design.
Three frequent mistakes with new-generation DRAM: (1) assuming x4 and x8 DDR5 chips share the same ball map - the data-pin assignment differs, so K4RHE086VB (x8) is not footprint-identical in function to this x4 part without datasheet verification; (2) overlooking that Sample-status parts may carry early die revisions with different SPD/timing tables; (3) ignoring on-die ECC behavior in DDR5, which changes RAS characteristics versus DDR4. Always lock the die revision and request a PCN/notification program from Samsung before production.
Compliance Information
No compliance data present in the verified web data for this MPN; verify against the official Samsung datasheet and Samsung's environmental reports.
