K6X0808C1D-BF55 vs K6X1008C2D-TF55 Comparison
Detailed side-by-side comparison of K6X0808C1D-BF55 by Samsung Electronics and K6X1008C2D-TF55 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSamsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ End of LifeSpecification Comparison
| Parameter | K6X0808C1D-BF55 | K6X1008C2D-TF55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $2.35 |
| Memory Type | Asynchronous SRAM | SRAM - Asynchronous |
| Memory Size | 256 Kbit | 1 Mbit |
| Organization | 32K x 8 | 128K x 8 |
| Access Time | 55 ns | — |
| Interface | Parallel | Parallel |
| Supply Voltage | 5 V | — |
| Technology | CMOS | Low Power Full CMOS |
| Package | 28-SOP | 32-TSOP REVERSE |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | 35 mA |
| Control Signals | CE, OE, WE | — |
| Memory Format | SRAM | Volatile (SRAM) |
| Clock Frequency | N/A (asynchronous) | N/A (asynchronous) |
| Refresh | Not required (static memory) | — |
| RoHS Status | unknown | RoHS: Yes (per distributor listing) |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Speed Options | — | 55 ns, 70 ns |