K6X0808C1D-GF55T00 vs K6X0808C1D-BF70T Comparison

Detailed side-by-side comparison of K6X0808C1D-GF55T00 by Samsung Electro-Mechanics and K6X0808C1D-BF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electro-Mechanics
K6X0808C1D-GF55T00 K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 ✓ Active
Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ Active

Specification Comparison

Parameter K6X0808C1D-GF55T00 K6X0808C1D-BF70T
Brand Samsung Electro-Mechanics Samsung Electronics
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $1.05
Memory Type SRAM - Asynchronous SRAM - Asynchronous
Memory Size 256 Kbit 256 Kbit
Organization 32K x 8 —
Access Time 55 ns 70 ns
Interface Parallel —
Clock Frequency N/A (asynchronous) —
Technology CMOS —
Operating Temperature [DATA_NEEDED: operating temperature range for GF grade] -40C to +85C (TA)
Supply Voltage [DATA_NEEDED: supply voltage range] —
Standby Current [DATA_NEEDED: standby current] —
Operating Current [DATA_NEEDED: operating current] —
Data Retention Low data retention voltage supported —
Package 28-SOP (450 mil) 28-SOP
Mounting Type Surface Mount Surface Mount
Packaging Variant Tape & Reel (T00 suffix) —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Memory Organization — 32K x 8
Memory Interface — Parallel
Write Cycle Time - Word, Page — 70 ns
Voltage - Supply — 4.5 V to 5.5 V
Process Technology — CMOS
Address Bus Width — 15 bit (A0-A14)
Data Bus Width — 8 bit (I/O0-I/O7)
Control Signals — CE, OE, WE
I/O Compatibility — TTL compatible
Refresh Requirement — None (fully static operation)

Datasheets & Resources

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