K6X0808C1D-GF55T00 vs K6X0808C1D-BF70T 对比

详细并排对比 K6X0808C1D-GF55T00 出自 Samsung Electro-Mechanics 和 K6X0808C1D-BF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
K6X0808C1D-GF55T00 K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 ✓ 量产中
Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ 量产中

规格对比

参数 K6X0808C1D-GF55T00 K6X0808C1D-BF70T
品牌 Samsung Electro-Mechanics Samsung Electronics
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $1.05
存储器类型 SRAM - Asynchronous SRAM - Asynchronous
存储容量 256 Kbit 256 Kbit
存储组织 32K x 8 —
Access Time 55 ns 70 ns
接口 Parallel —
Clock Frequency N/A (asynchronous) —
Technology CMOS —
工作温度 [DATA_NEEDED: operating temperature range for GF grade] -40C to +85C (TA)
电源电压 [DATA_NEEDED: supply voltage range] —
Standby Current [DATA_NEEDED: standby current] —
Operating Current [DATA_NEEDED: operating current] —
Data Retention Low data retention voltage supported —
封装 28-SOP (450 mil) 28-SOP
安装类型 Surface Mount Surface Mount
Packaging Variant Tape & Reel (T00 suffix) —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Memory Organization — 32K x 8
Memory Interface — Parallel
Write Cycle Time - Word, Page — 70 ns
Voltage - Supply — 4.5 V to 5.5 V
Process Technology — CMOS
Address Bus Width — 15 bit (A0-A14)
数据总线宽度 — 8 bit (I/O0-I/O7)
Control Signals — CE, OE, WE
I/O Compatibility — TTL compatible
Refresh Requirement — None (fully static operation)

数据手册与资源

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