K6X1008C2D-TF55 vs K6X0808C1D-BF55 Comparison
Detailed side-by-side comparison of K6X1008C2D-TF55 by Samsung Electronics and K6X0808C1D-BF55 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ End of LifeSamsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSpecification Comparison
| Parameter | K6X1008C2D-TF55 | K6X0808C1D-BF55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.35 | $1.85 |
| Memory Type | SRAM - Asynchronous | Asynchronous SRAM |
| Memory Size | 1 Mbit | 256 Kbit |
| Organization | 128K x 8 | 32K x 8 |
| Access Time (tAA) | 55 ns | — |
| Interface | Parallel | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | [DATA_NEEDED: operating current] |
| Technology | Low Power Full CMOS | CMOS |
| Package | 32-TSOP REVERSE | 28-SOP |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Memory Format | Volatile (SRAM) | SRAM |
| Clock Frequency | N/A (asynchronous) | N/A (asynchronous) |
| RoHS Status | RoHS: Yes (per distributor listing) | unknown |
| Access Time | — | 55 ns |
| Supply Voltage | — | 5 V |
| Control Signals | — | CE, OE, WE |
| Refresh | — | Not required (static memory) |