K9DVGB8U5M vs K9DVGY8J5M Comparison
Detailed side-by-side comparison of K9DVGB8U5M by Samsung Electronics and K9DVGY8J5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9DVGB8U5M | K9DVGY8J5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $1.00 |
| Memory Type | NAND Flash | — |
| Organization | [DATA_NEEDED: capacity organization] | — |
| Interface | Asynchronous x8-bit I/O | — |
| Supply Voltage | [DATA_NEEDED: VCC range] | — |
| Package | [DATA_NEEDED: package type and dimensions] | — |
| Mounting Type | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | — |
| Block Size | [DATA_NEEDED: erase block size] | — |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | [DATA_NEEDED: tR typical/us] |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | Samsung Electronics |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Density | — | [DATA_NEEDED: die density (Gb)] |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| Interface Type | — | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: package type and dimensions] |