K9DVGB8U5M vs K9DVGY8J5M Сравнение
Подробное сравнение бок о бок K9DVGB8U5M от Samsung Electronics и K9DVGY8J5M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung
K9DVGY8J5M ✓ АктивенСравнение характеристик
| Параметр | K9DVGB8U5M | K9DVGY8J5M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,05 | $1,00 |
| Тип памяти | NAND Flash | — |
| Организация памяти | [DATA_NEEDED: capacity organization] | — |
| Интерфейс | Asynchronous x8-bit I/O | — |
| Напряжение питания | [DATA_NEEDED: VCC range] | — |
| Корпус | [DATA_NEEDED: package type and dimensions] | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | — |
| Block Size | [DATA_NEEDED: erase block size] | — |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | [DATA_NEEDED: tR typical/us] |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Рабочая температура | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Статус RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | Samsung Electronics |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Density | — | [DATA_NEEDED: die density (Gb)] |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| Тип интерфейса | — | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: package type and dimensions] |