K9DVGB8U5M vs K9MDG08U5M Comparison

Detailed side-by-side comparison of K9DVGB8U5M by Samsung Electronics and K9MDG08U5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Active
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Active

Specification Comparison

Parameter K9DVGB8U5M K9MDG08U5M
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.05 $35.50
Memory Type NAND Flash MLC Large Block NAND Flash
Organization [DATA_NEEDED: capacity organization] 16G x 8 bit
Interface Asynchronous x8-bit I/O Asynchronous x8 multiplexed address/data
Supply Voltage [DATA_NEEDED: VCC range] —
Package [DATA_NEEDED: package type and dimensions] 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Mounting Type Surface Mount Surface Mount
Page Size [DATA_NEEDED: main page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: erase block size] [DATA_NEEDED: block size]
Read Time (tR) [DATA_NEEDED: page read cycle time] —
Program Time (tPROG) [DATA_NEEDED: page program time] [DATA_NEEDED: tPROG]
Erase Time (tBERS) [DATA_NEEDED: block erase time] —
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: retention specification] —
Operating Temperature [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Access Interface Signals CLE, ALE, WE, RE, CE, R/B, WP —
Bad Block Management Host-managed (controller ECC and bad-block table required) —
RoHS Status [DATA_NEEDED: RoHS compliance] unknown
Density — 16 Gbit (2 GB)
Cell Type — MLC (2 bits per cell)
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]

Datasheets & Resources

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