K9DVGB8U5M vs K9MDG08U5M Comparaison
Comparaison détaillée côte à côte de K9DVGB8U5M par Samsung Electronics et K9MDG08U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K9DVGB8U5M | K9MDG08U5M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,05 | $35,50 |
| Type de mémoire | NAND Flash | MLC Large Block NAND Flash |
| Organisation de la mémoire | [DATA_NEEDED: capacity organization] | 16G x 8 bit |
| Interface | Asynchronous x8-bit I/O | Asynchronous x8 multiplexed address/data |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | — |
| Boîtier | [DATA_NEEDED: package type and dimensions] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Type de montage | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: tPROG] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | unknown |
| Density | — | 16 Gbit (2 GB) |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |