K9DVGB8U5M vs K9MDG08U5M 比較
詳細な並列比較: K9DVGB8U5M メーカー: Samsung Electronics および K9MDG08U5M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9DVGB8U5M | K9MDG08U5M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.05 | $35.50 |
| メモリタイプ | NAND Flash | MLC Large Block NAND Flash |
| メモリ構成 | [DATA_NEEDED: capacity organization] | 16G x 8 bit |
| インターフェース | Asynchronous x8-bit I/O | Asynchronous x8 multiplexed address/data |
| 電源電圧 | [DATA_NEEDED: VCC range] | — |
| パッケージ | [DATA_NEEDED: package type and dimensions] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: tPROG] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 動作温度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance] | unknown |
| Density | — | 16 Gbit (2 GB) |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |