K9DVGB8U5M vs K9MDG08U5M 对比
详细并排对比 K9DVGB8U5M 出自 Samsung Electronics 和 K9MDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9DVGB8U5M | K9MDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.05 | $35.50 |
| 存储器类型 | NAND Flash | MLC Large Block NAND Flash |
| 存储组织 | [DATA_NEEDED: capacity organization] | 16G x 8 bit |
| 接口 | Asynchronous x8-bit I/O | Asynchronous x8 multiplexed address/data |
| 电源电压 | [DATA_NEEDED: VCC range] | — |
| 封装 | [DATA_NEEDED: package type and dimensions] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | [DATA_NEEDED: tPROG] |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 工作温度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | unknown |
| Density | — | 16 Gbit (2 GB) |
| Cell Type | — | MLC (2 bits per cell) |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |