K9DVGB8U5M vs K9PDG08U5M Comparison
Detailed side-by-side comparison of K9DVGB8U5M by Samsung Electronics and K9PDG08U5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ End of LifeSpecification Comparison
| Parameter | K9DVGB8U5M | K9PDG08U5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $4.20 |
| Memory Type | NAND Flash | NAND Flash (SLC) |
| Organization | [DATA_NEEDED: capacity organization] | x8 (multiplexed I/O) |
| Interface | Asynchronous x8-bit I/O | — |
| Supply Voltage | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage range] |
| Package | [DATA_NEEDED: package type and dimensions] | TSOP1-48 |
| Mounting Type | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |