K9DVGB8U5M vs K9PDG08U5M Comparaison
Comparaison détaillée côte à côte de K9DVGB8U5M par Samsung Electronics et K9PDG08U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vieComparaison des spécifications
| Paramètre | K9DVGB8U5M | K9PDG08U5M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | EEPROM |
| Statut du cycle de vie | Actif | Fin de vie |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,05 | $4,20 |
| Type de mémoire | NAND Flash | NAND Flash (SLC) |
| Organisation de la mémoire | [DATA_NEEDED: capacity organization] | x8 (multiplexed I/O) |
| Interface | Asynchronous x8-bit I/O | — |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage range] |
| Boîtier | [DATA_NEEDED: package type and dimensions] | TSOP1-48 |
| Type de montage | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |