K9DVGB8U5M vs K9PDG08U5M 比較
詳細な並列比較: K9DVGB8U5M メーカー: Samsung Electronics および K9PDG08U5M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9DVGB8U5M | K9PDG08U5M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | EEPROM |
| ライフサイクル状態 | 有効 | 製造終了 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $3.05 | $4.20 |
| メモリタイプ | NAND Flash | NAND Flash (SLC) |
| メモリ構成 | [DATA_NEEDED: capacity organization] | x8 (multiplexed I/O) |
| インターフェース | Asynchronous x8-bit I/O | — |
| 電源電圧 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage range] |
| パッケージ | [DATA_NEEDED: package type and dimensions] | TSOP1-48 |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| 動作温度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |