K9DVGB8U5M vs K9PDG08U5M Сравнение
Подробное сравнение бок о бок K9DVGB8U5M от Samsung Electronics и K9PDG08U5M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Снят с производстваСравнение характеристик
| Параметр | K9DVGB8U5M | K9PDG08U5M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | EEPROM |
| Статус жизненного цикла | Активен | Снято с производства |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,05 | $4,20 |
| Тип памяти | NAND Flash | NAND Flash (SLC) |
| Организация памяти | [DATA_NEEDED: capacity organization] | x8 (multiplexed I/O) |
| Интерфейс | Asynchronous x8-bit I/O | — |
| Напряжение питания | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage range] |
| Корпус | [DATA_NEEDED: package type and dimensions] | TSOP1-48 |
| Тип монтажа | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: main page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: erase block size] | [DATA_NEEDED: block size] |
| Read Time (tR) | [DATA_NEEDED: page read cycle time] | — |
| Program Time (tPROG) | [DATA_NEEDED: page program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Рабочая температура | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Signals | CLE, ALE, WE, RE, CE, R/B, WP | — |
| Bad Block Management | Host-managed (controller ECC and bad-block table required) | — |
| Статус RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |