K9F4G08U0B-PCB0 vs MX30LF4GE8AB Comparison

Detailed side-by-side comparison of K9F4G08U0B-PCB0 by Samsung Electronics and MX30LF4GE8AB by Macronix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ Active

Specification Comparison

Parameter K9F4G08U0B-PCB0 MX30LF4GE8AB
Brand Samsung Electronics Macronix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.40 $2.98
Memory Type NAND Flash (SLC, asynchronous) NAND Flash (SLC)
Density 4 Gbit (512 MB) 4 Gbit (512 M x 8)
Organization (512M + 16M) x 8 bit —
Page Size (2 K + 64) byte 2112 bytes (2048 + 64 spare)
Block Size (128 K + 4 K) byte 64 pages (128 KB + 4 KB spare)
Data Register (2K + 64) x 8 bit —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Interface 8-bit multiplexed NAND I/O Parallel (asynchronous)
Package TSOP1-48 (12 mm x 20 mm, lead-free) 48-pin TSOP Type-I (48-TSOP)
Mounting Type Surface Mount Surface Mount
Operating Temperature (commercial) 0C to +70C —
Program/Erase Automatic, on-chip page buffer —
ECC Requirement External (1-bit/512B minimum, 4-bit recommended) —
RoHS Status Lead-free (Pb-free), RoHS compliant Compliant
Package Suffix Code -PCB0 (TSOP1, 3.3 V, commercial, lead-free) —
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time — 20 ns
Bus Width — 8-bit (multiplexed I/O)
Standard Compliance — ONFI 1.0
Program/Erase Cycles — [DATA_NEEDED: P/E endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
Operating Temperature — -40C to +85C (industrial)
MSL Level — [DATA_NEEDED: MSL rating]
Status Polling — R/B# open-drain output

Datasheets & Resources

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