K9F4G08U0B-PCB0 vs MX30LF4GE8AB 对比

详细并排对比 K9F4G08U0B-PCB0 出自 Samsung Electronics 和 MX30LF4GE8AB 出自 Macronix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ 量产中

规格对比

参数 K9F4G08U0B-PCB0 MX30LF4GE8AB
品牌 Samsung Electronics Macronix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.40 $2.98
存储器类型 NAND Flash (SLC, asynchronous) NAND Flash (SLC)
Density 4 Gbit (512 MB) 4 Gbit (512 M x 8)
存储组织 (512M + 16M) x 8 bit —
Page Size (2 K + 64) byte 2112 bytes (2048 + 64 spare)
Block Size (128 K + 4 K) byte 64 pages (128 KB + 4 KB spare)
Data Register (2K + 64) x 8 bit —
Supply Voltage (VCC) 2.7 V to 3.6 V —
接口 8-bit multiplexed NAND I/O Parallel (asynchronous)
封装 TSOP1-48 (12 mm x 20 mm, lead-free) 48-pin TSOP Type-I (48-TSOP)
安装类型 Surface Mount Surface Mount
Operating Temperature (commercial) 0C to +70C —
Program/Erase Automatic, on-chip page buffer —
ECC Requirement External (1-bit/512B minimum, 4-bit recommended) —
RoHS 状态 Lead-free (Pb-free), RoHS compliant Compliant
Package Suffix Code -PCB0 (TSOP1, 3.3 V, commercial, lead-free) —
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time — 20 ns
Bus Width — 8-bit (multiplexed I/O)
Standard Compliance — ONFI 1.0
Program/Erase Cycles — [DATA_NEEDED: P/E endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
工作温度 — -40C to +85C (industrial)
MSL 等级 — [DATA_NEEDED: MSL rating]
Status Polling — R/B# open-drain output

数据手册与资源

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