LMG2104R022 vs LMG2104R044 Comparison
Detailed side-by-side comparison of LMG2104R022 by Texas Instruments and LMG2104R044 by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | LMG2104R022 | LMG2104R044 |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.79 | $6.08 |
| Product Type | 100V GaN Half-Bridge Power Stage with Integrated Driver | — |
| Topology | Half-bridge (high-side + low-side GaN FETs) | Half-Bridge (high-side + low-side) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Typical On-Resistance (RDS(on)) | 2.2 mΩ | — |
| Integrated Gate Driver | Yes | Yes |
| FET Technology | Enhancement-mode Gallium Nitride (eGaN) | — |
| Smart Switching Features | Yes (dV/dt control, adaptive dead time) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Over-Current Protection | Yes | — |
| Over-Temperature Protection | Yes | — |
| Bootstrap Diode | Integrated | — |
| Package | QFN-18 (VBNR) 4.5 mm × 7.0 mm | QFN 5 mm x 4 mm |
| Lead Finish / RoHS | RoHS compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | Half-bridge, hard-switched or soft-switched | — |
| Switch Type | — | Enhancement-mode GaN FET |
| Drain-Source Blocking Voltage | — | 100 V |
| Typical Rds(on) per FET | — | 4.4 mΩ |
| Integrated Bootstrap Regulator | — | Yes |
| Logic Input Compatibility | — | TTL, 3.3 V and 5 V |
| Dead-Time Control | — | Smart-Switching auto dead-time |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and bootstrap) |
| Thermal Shutdown | — | Yes |
| Short-Circuit / Overcurrent Protection | — | Yes |
| Operating Temperature | — | -40C to +125C |
| RoHS Status | — | Compliant |