LMG2104R022 vs LMG2104R044 비교

다음의 상세 나란히 비교: LMG2104R022 제조: Texas Instruments 및 LMG2104R044 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
LMG2104R022 LMG2104R022 - 100V 2.2mΩ GaN Half-Bridge Power Stage | TI

LMG2104R022 - 100V 2.2mΩ GaN Half-Bridge Power Stage | TI

LMG2104R022 ✓ 활성
Texas Instruments
LMG2104R044 LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI

LMG2104R044 - 100V 4.4mΩ GaN Half-Bridge Power Stage | TI

LMG2104R044 ✓ 활성

사양 비교

파라미터 LMG2104R022 LMG2104R044
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.79 $6.08
Product Type 100V GaN Half-Bridge Power Stage with Integrated Driver —
토폴로지 Half-bridge (high-side + low-side GaN FETs) Half-Bridge (high-side + low-side)
Drain-to-Source Voltage (VDS) 100 V —
Typical On-Resistance (RDS(on)) 2.2 mΩ —
Integrated Gate Driver Yes Yes
FET Technology Enhancement-mode Gallium Nitride (eGaN) —
Smart Switching Features Yes (dV/dt control, adaptive dead time) —
Under-Voltage Lockout (UVLO) Yes —
Over-Current Protection Yes —
Over-Temperature Protection Yes —
Bootstrap Diode Integrated —
패키지 QFN-18 (VBNR) 4.5 mm × 7.0 mm QFN 5 mm x 4 mm
Lead Finish / RoHS RoHS compliant —
실장 유형 Surface Mount Surface Mount
Operating Mode Half-bridge, hard-switched or soft-switched —
Switch Type — Enhancement-mode GaN FET
Drain-Source Blocking Voltage — 100 V
Typical Rds(on) per FET — 4.4 mΩ
Integrated Bootstrap Regulator — Yes
Logic Input Compatibility — TTL, 3.3 V and 5 V
Dead-Time Control — Smart-Switching auto dead-time
Undervoltage Lockout (UVLO) — Yes (VCC and bootstrap)
열 차단 — Yes
Short-Circuit / Overcurrent Protection — Yes
동작 온도 — -40C to +125C
RoHS 상태 — Compliant

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