LMG2104R022 vs LMG2104R044 Vergleich
Detaillierter Direktvergleich von LMG2104R022 von Texas Instruments und LMG2104R044 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | LMG2104R022 | LMG2104R044 |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,79 | $6,08 |
| Product Type | 100V GaN Half-Bridge Power Stage with Integrated Driver | — |
| Topologie | Half-bridge (high-side + low-side GaN FETs) | Half-Bridge (high-side + low-side) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Typical On-Resistance (RDS(on)) | 2.2 mΩ | — |
| Integrated Gate Driver | Yes | Yes |
| FET Technology | Enhancement-mode Gallium Nitride (eGaN) | — |
| Smart Switching Features | Yes (dV/dt control, adaptive dead time) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Over-Current Protection | Yes | — |
| Over-Temperature Protection | Yes | — |
| Bootstrap Diode | Integrated | — |
| Gehäuse | QFN-18 (VBNR) 4.5 mm × 7.0 mm | QFN 5 mm x 4 mm |
| Lead Finish / RoHS | RoHS compliant | — |
| Montageart | Surface Mount | Surface Mount |
| Operating Mode | Half-bridge, hard-switched or soft-switched | — |
| Switch Type | — | Enhancement-mode GaN FET |
| Drain-Source Blocking Voltage | — | 100 V |
| Typical Rds(on) per FET | — | 4.4 mΩ |
| Integrated Bootstrap Regulator | — | Yes |
| Logic Input Compatibility | — | TTL, 3.3 V and 5 V |
| Dead-Time Control | — | Smart-Switching auto dead-time |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and bootstrap) |
| Thermisches Abschalten | — | Yes |
| Short-Circuit / Overcurrent Protection | — | Yes |
| Betriebstemperatur | — | -40C to +125C |
| RoHS-Status | — | Compliant |