M29F800FB55N3E2 vs M29W800FB70N3E Comparison
Detailed side-by-side comparison of M29F800FB55N3E2 by Micron Technology and M29W800FB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron
M29W800FB70N3E ✓ ActiveSpecification Comparison
| Parameter | M29F800FB55N3E2 | M29W800FB70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.83 | $0.95 |
| Memory Size | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Memory Type | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 70 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Interface | Parallel | Parallel |
| Organization | Bottom boot (B suffix) | 512K x 16 / 1M x 8 |
| Data Bus Width | 8-bit or 16-bit (BYTE# selectable) | x8/x16 (BYTE# selectable) |
| Package | 48-pin TSOP Type I (N suffix) | 48-TSOP (12 x 20 mm), TSOP I |
| Mounting Type | Surface Mount (SMD/SMT) | Surface Mount |
| Operating Temperature | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| RoHS Status | Compliant (E suffix) | RoHS compliant (plastic TSOP-48) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Density | — | 8 Mbit (8388608 bits) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Pin Count | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |