M29F800FT55N3E2 vs M29F400FT55M3E2 Comparison
Detailed side-by-side comparison of M29F800FT55N3E2 by Micron Technology and M29F400FT55M3E2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron
M29F800FT55N3E2 ✓ ActiveMicron Technology
M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron
M29F400FT55M3E2 ✓ ActiveSpecification Comparison
| Parameter | M29F800FT55N3E2 | M29F400FT55M3E2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.98 | $1.98 |
| Memory Type | NOR Flash | NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5 V | 5 V |
| Interface | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | — |
| Operating Temperature | -40C to +125C | -40 C to +125 C |
| Package | 48-TSOP I | 44-SO (SOP-44) |
| Mounting Type | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| RoHS Status | Compliant (E suffix = lead-free/RoHS) | Compliant |
| Memory Size | — | 4 Mbit (4194 kbits) |
| Organization | — | 512K x 8 / 256K x 16 |
| Number of Words | — | 256 k |
| Bits per Word | — | 16 bits |
| Programming | — | Embedded byte/word program algorithms |
| Erase | — | Embedded program/erase controller, block erase |
| Boot Block | — | Top boot block |
| Packaging | — | Tray |