M29W064FB70N3E vs M29W064FT70N3F Comparison
Detailed side-by-side comparison of M29W064FB70N3E by Micron Technology and M29W064FT70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron
M29W064FB70N3E ✓ ActiveSpecification Comparison
| Parameter | M29W064FB70N3E | M29W064FT70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $6.30 |
| Memory Type | NOR Flash, Parallel | NOR Flash |
| Memory Size | 64 Mbit (8M x 8 / 4M x 16) | — |
| Supply Voltage | 3.0 V to 3.6 V (3V/3.3V) | — |
| Access Time | 70 ns | 70 ns |
| Interface | Parallel, CFI compliant | Parallel |
| Boot Block | Bottom boot block (FB variant) | — |
| Package | 48-Pin TSOP | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| RoHS Status | Compliant | unknown |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| Organization | — | 8 Mbit x8 / 4 Mbit x16 |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Boot Block Configuration | — | Top boot block (FT) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Product Longevity Program | — | No |
| Width | — | x8/x16 |