M29W064FB70N3E vs M29W064FT70N3F Vergleich
Detaillierter Direktvergleich von M29W064FB70N3E von Micron Technology und M29W064FT70N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W064FB70N3E | M29W064FT70N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Flash | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $6,30 |
| Speichertyp | NOR Flash, Parallel | NOR Flash |
| Speichergröße | 64 Mbit (8M x 8 / 4M x 16) | — |
| Versorgungsspannung | 3.0 V to 3.6 V (3V/3.3V) | — |
| Access Time | 70 ns | 70 ns |
| Schnittstelle | Parallel, CFI compliant | Parallel |
| Boot Block | Bottom boot block (FB variant) | — |
| Gehäuse | 48-Pin TSOP | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| RoHS-Status | Compliant | unknown |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| Speicherorganisation | — | 8 Mbit x8 / 4 Mbit x16 |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Boot Block Configuration | — | Top boot block (FT) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Product Longevity Program | — | No |
| Width | — | x8/x16 |