M29W160EB70N3E vs M29F160FB55N3F2 Comparison

Detailed side-by-side comparison of M29W160EB70N3E by Micron Technology and M29F160FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ Active
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

Specification Comparison

Parameter M29W160EB70N3E M29F160FB55N3F2
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $1.76 $5.60
Memory Type FLASH - NOR Parallel NOR Flash
Memory Size 16 Mbit (2M x8, 1M x16) —
Organization 2M x8 / 1M x16 1 Mword x 16 bits / 2 Mbyte x 8 bits
Access Time 70 ns 55 ns
Interface Parallel Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V —
Programming Time 10 us (typical) —
Cell Type SLC NOR —
Operating Temperature -40C to +125C -40 to +125 C
Package / Case 48-TFSOP (0.724 in, 18.40 mm width) —
Mounting Type Surface Mount Surface Mount
Packaging Tray —
Speed Grade -70 —
FBGA Code N/A (TSOP package) —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (lead-free)
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Density — 16777 kbits (16 Mbit)
Number of Words — 1000 k
Bits per Word — 16 bits
Supply Voltage — 5 V
Boot Block Architecture — Bottom Boot Block
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

Datasheets & Resources

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