M29W160EB70N3E vs M29F160FB55N3F2 对比

详细并排对比 M29W160EB70N3E 出自 Micron Technology 和 M29F160FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ 量产中
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

规格对比

参数 M29W160EB70N3E M29F160FB55N3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $1.76 $5.60
存储器类型 FLASH - NOR Parallel NOR Flash
存储容量 16 Mbit (2M x8, 1M x16) —
存储组织 2M x8 / 1M x16 1 Mword x 16 bits / 2 Mbyte x 8 bits
Access Time 70 ns 55 ns
接口 Parallel Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V —
Programming Time 10 us (typical) —
Cell Type SLC NOR —
工作温度 -40C to +125C -40 to +125 C
封装 / 外壳 48-TFSOP (0.724 in, 18.40 mm width) —
安装类型 Surface Mount Surface Mount
Packaging Tray —
Speed Grade -70 —
FBGA Code N/A (TSOP package) —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (lead-free)
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Density — 16777 kbits (16 Mbit)
Number of Words — 1000 k
Bits per Word — 16 bits
电源电压 — 5 V
Boot Block Architecture — Bottom Boot Block
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

数据手册与资源

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