M29W160ET70N3F vs M29W160EB70N3F Comparison
Detailed side-by-side comparison of M29W160ET70N3F by Micron Technology and M29W160EB70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W160ET70N3F | M29W160EB70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.80 | $1.01 |
| Memory Type | Parallel NOR Flash | FLASH - NOR |
| Memory Size | 16 Mbit (2 M x 8 / 1 M x 16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 3 V / 3.3 V | — |
| Technology | CMOS | — |
| Boot Block Architecture | Top boot | — |
| Bus Configuration | x8 / x16 selectable | x8 / x16 selectable (BYTE# pin) |
| Package | 48-pin TSOP | — |
| Mounting Type | Surface Mount | Surface Mount |
| Temperature Grade | Automotive (AEC-Q100) | — |
| Qualification | AEC-Q100 qualified | Automotive, AEC-Q100 |
| Packaging | Tape and Reel | Tape & Reel |
| RoHS Status | RoHS-compliant package (F option) | — |
| Programming Interface | Parallel command set | — |
| Number of Terminals | 48 | — |
| Interface | — | Parallel (Byte/Word-wide) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us per byte/word (typical) |
| Boot Block Position | — | Bottom boot block |
| Package / Case | — | 48-TSOP (0.724 in, 18.40 mm width) |
| Erase Architecture | — | Block erase (boot block + main blocks) |
| Common Flash Interface | — | Yes (CFI compliant) |
| Reset Input | — | RESET# hardware reset pin |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |