M29W320DB70N3E vs M29W320DT70N3E Comparison
Detailed side-by-side comparison of M29W320DB70N3E by Micron Technology and M29W320DT70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W320DB70N3E | M29W320DT70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $2.05 |
| Memory Type | NOR Flash | NOR Flash |
| Density | 32 Mbit (33554 kbits) | — |
| Organization | 2M x 16 | 4M x8 / 2M x16 |
| Number of Words | 2000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel |
| Block Architecture | Non-uniform parameter blocks, boot block (bottom boot, DB type) | — |
| Operating Temperature | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Package | 48-TSOP I | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | [DATA_NEEDED: RoHS status] |
| Programming Mode | Single VCC program/erase; automatic program/erase with status polling | — |
| Power-Up Mode | Read mode (default) | — |
| Memory Size | — | 32 Mbit |
| Read Current (typical) | — | 10 mA |
| Boot Block Architecture | — | Top boot (DT suffix) |
| Boot Region | — | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block |
| Package Length | — | 18.4 mm |
| MSL Level | — | 3 (168 Hours) |
| Peak Reflow Temperature Time | — | 30 s |
| Packaging | — | Tray |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |