M29W320DB70N3E vs M29W320DT70N3E Comparación
Comparación detallada lado a lado de M29W320DB70N3E por Micron Technology y M29W320DT70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W320DB70N3E | M29W320DT70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Flash | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $2,05 |
| Tipo de memoria | NOR Flash | NOR Flash |
| Density | 32 Mbit (33554 kbits) | — |
| Organización de memoria | 2M x 16 | 4M x8 / 2M x16 |
| Number of Words | 2000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interfaz | Parallel | Parallel |
| Block Architecture | Non-uniform parameter blocks, boot block (bottom boot, DB type) | — |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | 48-TSOP I | 48-TSOP I |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | ROHS3 Compliant | [DATA_NEEDED: RoHS status] |
| Programming Mode | Single VCC program/erase; automatic program/erase with status polling | — |
| Power-Up Mode | Read mode (default) | — |
| Tamaño de memoria | — | 32 Mbit |
| Read Current (typical) | — | 10 mA |
| Boot Block Architecture | — | Top boot (DT suffix) |
| Boot Region | — | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block |
| Package Length | — | 18.4 mm |
| Nivel MSL | — | 3 (168 Hours) |
| Peak Reflow Temperature Time | — | 30 s |
| Packaging | — | Tray |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |