M29W320DB70N3E vs M29W320DT70N3E Vergleich
Detaillierter Direktvergleich von M29W320DB70N3E von Micron Technology und M29W320DT70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W320DB70N3E | M29W320DT70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Flash | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,95 | $2,05 |
| Speichertyp | NOR Flash | NOR Flash |
| Density | 32 Mbit (33554 kbits) | — |
| Speicherorganisation | 2M x 16 | 4M x8 / 2M x16 |
| Number of Words | 2000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Schnittstelle | Parallel | Parallel |
| Block Architecture | Non-uniform parameter blocks, boot block (bottom boot, DB type) | — |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 48-TSOP I | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | ROHS3 Compliant | [DATA_NEEDED: RoHS status] |
| Programming Mode | Single VCC program/erase; automatic program/erase with status polling | — |
| Power-Up Mode | Read mode (default) | — |
| Speichergröße | — | 32 Mbit |
| Read Current (typical) | — | 10 mA |
| Boot Block Architecture | — | Top boot (DT suffix) |
| Boot Region | — | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block |
| Package Length | — | 18.4 mm |
| MSL-Level | — | 3 (168 Hours) |
| Peak Reflow Temperature Time | — | 30 s |
| Packaging | — | Tray |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |