M29W640GB70N3E vs M29W320DB70N3E Comparison
Detailed side-by-side comparison of M29W640GB70N3E by Micron Technology and M29W320DB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W640GB70N3E | M29W320DB70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Flash |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.05 | $1.95 |
| Memory Type | NOR Flash | NOR Flash |
| Density | 64 Mbit (8 MByte) | 32 Mbit (33554 kbits) |
| Interface | Parallel, asynchronous | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | — |
| Organization | 4M x16 / 8M x8 | 2M x 16 |
| Boot Block | Bottom boot block (GB) | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Package | 48-TSOP I | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |