M29W640GB70N3E vs M29W320DB70N3E Vergleich
Detaillierter Direktvergleich von M29W640GB70N3E von Micron Technology und M29W320DB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W640GB70N3E | M29W320DB70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,05 | $1,95 |
| Speichertyp | NOR Flash | NOR Flash |
| Density | 64 Mbit (8 MByte) | 32 Mbit (33554 kbits) |
| Schnittstelle | Parallel, asynchronous | Parallel |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V | — |
| Speicherorganisation | 4M x16 / 8M x8 | 2M x 16 |
| Boot Block | Bottom boot block (GB) | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP I | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |