M29W640GB70N3E vs M29W320DB70N3E 对比
详细并排对比 M29W640GB70N3E 出自 Micron Technology 和 M29W320DB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W640GB70N3E | M29W320DB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Flash |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.05 | $1.95 |
| 存储器类型 | NOR Flash | NOR Flash |
| Density | 64 Mbit (8 MByte) | 32 Mbit (33554 kbits) |
| 接口 | Parallel, asynchronous | Parallel |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 2.7 V to 3.6 V | — |
| 存储组织 | 4M x16 / 8M x8 | 2M x 16 |
| Boot Block | Bottom boot block (GB) | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| 封装 | 48-TSOP I | 48-TSOP I |
| 安装类型 | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |