M29W800FB70N3E vs M29F800FB55N3E2 Comparison

Detailed side-by-side comparison of M29W800FB70N3E by Micron Technology and M29F800FB55N3E2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ Active
Micron Technology
M29F800FB55N3E2 M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 ✓ Active

Specification Comparison

Parameter M29W800FB70N3E M29F800FB55N3E2
Brand Micron Technology Micron Technology
Category Memory ICs EEPROM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $3.83
Memory Type NOR Flash NOR Flash, SLC, Parallel
Density 8 Mbit (8388608 bits) —
Organization 512K x 16 / 1M x 8 Bottom boot (B suffix)
Data Bus Width x8/x16 (BYTE# selectable) 8-bit or 16-bit (BYTE# selectable)
Access Time 70 ns 55 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read —
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
Interface Parallel Parallel
Operating Temperature -40C to +125C Up to +125 C (Auto Grade 3 suffix)
Package 48-TSOP (12 x 20 mm), TSOP I 48-pin TSOP Type I (N suffix)
Pin Count 48 —
Mounting Type Surface Mount Surface Mount (SMD/SMT)
RoHS Status RoHS compliant (plastic TSOP-48) Compliant (E suffix)
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
Memory Size — 8 Mbit (1 M x 8 / 512 K x 16)
Supply Voltage Min — 4.5 V
Supply Voltage Max — 5.5 V
Packing — Tray (blank suffix)
Programming Operations — READ, ERASE, PROGRAM via command set
Write Protection — Block protection with lockable boot block
Status Output — RB# (Ready/Busy)

Datasheets & Resources

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