M29W800FB70N3E vs M29F800FB55N3E2 对比

详细并排对比 M29W800FB70N3E 出自 Micron Technology 和 M29F800FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ 量产中
Micron Technology
M29F800FB55N3E2 M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron

M29F800FB55N3E2 ✓ 量产中

规格对比

参数 M29W800FB70N3E M29F800FB55N3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $3.83
存储器类型 NOR Flash NOR Flash, SLC, Parallel
Density 8 Mbit (8388608 bits) —
存储组织 512K x 16 / 1M x 8 Bottom boot (B suffix)
数据总线宽度 x8/x16 (BYTE# selectable) 8-bit or 16-bit (BYTE# selectable)
Access Time 70 ns 55 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read —
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
接口 Parallel Parallel
工作温度 -40C to +125C Up to +125 C (Auto Grade 3 suffix)
封装 48-TSOP (12 x 20 mm), TSOP I 48-pin TSOP Type I (N suffix)
引脚数量 48 —
安装类型 Surface Mount Surface Mount (SMD/SMT)
RoHS 状态 RoHS compliant (plastic TSOP-48) Compliant (E suffix)
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
存储容量 — 8 Mbit (1 M x 8 / 512 K x 16)
Supply Voltage Min — 4.5 V
Supply Voltage Max — 5.5 V
Packing — Tray (blank suffix)
Programming Operations — READ, ERASE, PROGRAM via command set
Write Protection — Block protection with lockable boot block
Status Output — RB# (Ready/Busy)

数据手册与资源

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