MC33289DWR2 vs BTS621L1E3128ABUMA1 Comparison

Detailed side-by-side comparison of MC33289DWR2 by NXP Semiconductors and BTS621L1E3128ABUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MC33289DWR2 MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 ✓ Active

Specification Comparison

Parameter MC33289DWR2 BTS621L1E3128ABUMA1
Brand NXP Semiconductors Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $2.45
Product Type Dual High-Side Switch (DHSS) Dual-channel smart high-side power switch (PROFET)
Topology 2 x High-Side N-MOSFET switches —
On-State Resistance (RDSon) 40 mOhm (per channel) —
Supply Voltage Range (VCC) 6 V to 27 V —
Maximum Transient Voltage 40 V (load dump tolerant) —
Output Current per Channel [DATA_NEEDED: continuous current rating per channel] —
Number of Outputs 2 —
Input Compatibility TTL/CMOS compatible logic inputs —
Fault Protection Current limit, thermal shutdown, open-load detect —
Status Feedback Yes (fault flag output) —
Operating Temperature -40C to +125C (automotive grade) —
Package 20-SOIC (0.295 inch, 7.50 mm width) PG-TO263-7-2 (D2PAK-7, exposed tab)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status [DATA_NEEDED: RoHS status] —
Automotive Grade Yes (AEC-Q100 qualified) —
Charge Pump Integrated (gate drive) —
Number of Channels — 2 (dual high-side, 1:1)
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
Operating Temperature Range — -40 °C to +150 °C junction
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Yes - open-load and overtemperature reporting
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

Datasheets & Resources

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