MC33289DWR2 vs BTS621L1E3128ABUMA1 对比
详细并排对比 MC33289DWR2 出自 NXP Semiconductors 和 BTS621L1E3128ABUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ 量产中规格对比
| 参数 | MC33289DWR2 | BTS621L1E3128ABUMA1 |
|---|---|---|
| 品牌 | NXP Semiconductors | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $2.45 |
| Product Type | Dual High-Side Switch (DHSS) | Dual-channel smart high-side power switch (PROFET) |
| 拓扑 | 2 x High-Side N-MOSFET switches | — |
| On-State Resistance (RDSon) | 40 mOhm (per channel) | — |
| Supply Voltage Range (VCC) | 6 V to 27 V | — |
| Maximum Transient Voltage | 40 V (load dump tolerant) | — |
| Output Current per Channel | [DATA_NEEDED: continuous current rating per channel] | — |
| 输出数量 | 2 | — |
| Input Compatibility | TTL/CMOS compatible logic inputs | — |
| Fault Protection | Current limit, thermal shutdown, open-load detect | — |
| Status Feedback | Yes (fault flag output) | — |
| 工作温度 | -40C to +125C (automotive grade) | — |
| 封装 | 20-SOIC (0.295 inch, 7.50 mm width) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Automotive Grade | Yes (AEC-Q100 qualified) | — |
| Charge Pump | Integrated (gate drive) | — |
| Number of Channels | — | 2 (dual high-side, 1:1) |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| 工作温度范围 | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | — | Yes - open-load and overtemperature reporting |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |