MC33289DWR2 vs BTS621L1E3128ABUMA1 Comparación
Comparación detallada lado a lado de MC33289DWR2 por NXP Semiconductors y BTS621L1E3128ABUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20
MC33289DWR2 ✓ ActivoInfineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | MC33289DWR2 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marca | NXP Semiconductors | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $2,45 |
| Product Type | Dual High-Side Switch (DHSS) | Dual-channel smart high-side power switch (PROFET) |
| Topología | 2 x High-Side N-MOSFET switches | — |
| On-State Resistance (RDSon) | 40 mOhm (per channel) | — |
| Supply Voltage Range (VCC) | 6 V to 27 V | — |
| Maximum Transient Voltage | 40 V (load dump tolerant) | — |
| Output Current per Channel | [DATA_NEEDED: continuous current rating per channel] | — |
| Número de salidas | 2 | — |
| Input Compatibility | TTL/CMOS compatible logic inputs | — |
| Fault Protection | Current limit, thermal shutdown, open-load detect | — |
| Status Feedback | Yes (fault flag output) | — |
| Temperatura de funcionamiento | -40C to +125C (automotive grade) | — |
| Encapsulado | 20-SOIC (0.295 inch, 7.50 mm width) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Automotive Grade | Yes (AEC-Q100 qualified) | — |
| Charge Pump | Integrated (gate drive) | — |
| Number of Channels | — | 2 (dual high-side, 1:1) |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Rango de temperatura de funcionamiento | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | — | Yes - open-load and overtemperature reporting |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |