MC33289DWR2 vs BTS621L1E3128ABUMA1 Vergleich
Detaillierter Direktvergleich von MC33289DWR2 von NXP Semiconductors und BTS621L1E3128ABUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | MC33289DWR2 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marke | NXP Semiconductors | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $2,45 |
| Product Type | Dual High-Side Switch (DHSS) | Dual-channel smart high-side power switch (PROFET) |
| Topologie | 2 x High-Side N-MOSFET switches | — |
| On-State Resistance (RDSon) | 40 mOhm (per channel) | — |
| Supply Voltage Range (VCC) | 6 V to 27 V | — |
| Maximum Transient Voltage | 40 V (load dump tolerant) | — |
| Output Current per Channel | [DATA_NEEDED: continuous current rating per channel] | — |
| Anzahl der Ausgänge | 2 | — |
| Input Compatibility | TTL/CMOS compatible logic inputs | — |
| Fault Protection | Current limit, thermal shutdown, open-load detect | — |
| Status Feedback | Yes (fault flag output) | — |
| Betriebstemperatur | -40C to +125C (automotive grade) | — |
| Gehäuse | 20-SOIC (0.295 inch, 7.50 mm width) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Automotive Grade | Yes (AEC-Q100 qualified) | — |
| Charge Pump | Integrated (gate drive) | — |
| Number of Channels | — | 2 (dual high-side, 1:1) |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Betriebstemperaturbereich | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | — | Yes - open-load and overtemperature reporting |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |