MC33289DWR2 vs BTS621L1E3128ABUMA1 Comparaison
Comparaison détaillée côte à côte de MC33289DWR2 par NXP Semiconductors et BTS621L1E3128ABUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ ActifComparaison des spécifications
| Paramètre | MC33289DWR2 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marque | NXP Semiconductors | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $2,45 |
| Product Type | Dual High-Side Switch (DHSS) | Dual-channel smart high-side power switch (PROFET) |
| Topologie | 2 x High-Side N-MOSFET switches | — |
| On-State Resistance (RDSon) | 40 mOhm (per channel) | — |
| Supply Voltage Range (VCC) | 6 V to 27 V | — |
| Maximum Transient Voltage | 40 V (load dump tolerant) | — |
| Output Current per Channel | [DATA_NEEDED: continuous current rating per channel] | — |
| Nombre de sorties | 2 | — |
| Input Compatibility | TTL/CMOS compatible logic inputs | — |
| Fault Protection | Current limit, thermal shutdown, open-load detect | — |
| Status Feedback | Yes (fault flag output) | — |
| Température de fonctionnement | -40C to +125C (automotive grade) | — |
| Boîtier | 20-SOIC (0.295 inch, 7.50 mm width) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Automotive Grade | Yes (AEC-Q100 qualified) | — |
| Charge Pump | Integrated (gate drive) | — |
| Number of Channels | — | 2 (dual high-side, 1:1) |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Plage de température de fonctionnement | — | -40 °C to +150 °C junction |
| Input Logic Compatibility | — | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | — | Yes - open-load and overtemperature reporting |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |