MC9S12XDP512MAG vs MC9S12DG128CPV Comparison
Detailed side-by-side comparison of MC9S12XDP512MAG by NXP Semiconductors and MC9S12DG128CPV by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MC9S12XDP512MAG | MC9S12DG128CPV |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | Microcontrollers | Microcontrollers |
| Lifecycle Status | NRND | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $17.85 |
| Core Processor | HCS12X (16-bit CISC) | — |
| Core Size | 16-bit | — |
| Maximum Clock Frequency | 80 MHz | — |
| Flash Memory Size | 512 KB (512K x 8) | — |
| Supply Voltage | 2.5 V / 5 V | — |
| Package | 144-LQFP (20x20 mm) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Terminal Form | Gull Wing | — |
| Package Shape | Square (LFQFP) | — |
| ADC Resolution | 10-bit | — |
| Temperature Grade | Automotive | — |
| Qualification | AEC-Q100 | — |
| Instruction Set Compatibility | Upward compatible with HCS12 | — |
| External Bus Interface | Yes (144-pin LQFP option) | — |
| Target Application Domain | Automotive multiplexing | — |
| Lifecycle Status | NRND (Not Recommended for New Designs) | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| EEPROM | — | 2 KB |
| Number of I/O Pins | — | 91 |
| Package / Case | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Operating Temperature | — | -40 C to +125 C (automotive) |
| MSL Level | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| RoHS Status | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |