MC9S12XDP512MAG vs MC9S12DG128CPV Comparación
Comparación detallada lado a lado de MC9S12XDP512MAG por NXP Semiconductors y MC9S12DG128CPV por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MC9S12XDP512MAG | MC9S12DG128CPV |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Microcontrollers | Microcontrollers |
| Estado del ciclo de vida | NRND | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $17,85 |
| Core Processor | HCS12X (16-bit CISC) | — |
| Core Size | 16-bit | — |
| Frecuencia de reloj máxima | 80 MHz | — |
| Flash Memory Size | 512 KB (512K x 8) | — |
| Tensión de alimentación | 2.5 V / 5 V | — |
| Encapsulado | 144-LQFP (20x20 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Terminal Form | Gull Wing | — |
| Package Shape | Square (LFQFP) | — |
| ADC Resolution | 10-bit | — |
| Temperature Grade | Automotive | — |
| Qualification | AEC-Q100 | — |
| Instruction Set Compatibility | Upward compatible with HCS12 | — |
| External Bus Interface | Yes (144-pin LQFP option) | — |
| Target Application Domain | Automotive multiplexing | — |
| Estado del ciclo de vida | NRND (Not Recommended for New Designs) | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| EEPROM | — | 2 KB |
| Number of I/O Pins | — | 91 |
| Encapsulado / Carcasa | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Temperatura de funcionamiento | — | -40 C to +125 C (automotive) |
| Nivel MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Estado RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |