MC9S12XDP512MAG vs MC9S12DG128CPV Vergleich
Detaillierter Direktvergleich von MC9S12XDP512MAG von NXP Semiconductors und MC9S12DG128CPV von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MC9S12XDP512MAG | MC9S12DG128CPV |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Microcontrollers | Microcontrollers |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $17,85 |
| Core Processor | HCS12X (16-bit CISC) | — |
| Core Size | 16-bit | — |
| Maximale Taktfrequenz | 80 MHz | — |
| Flash Memory Size | 512 KB (512K x 8) | — |
| Versorgungsspannung | 2.5 V / 5 V | — |
| Gehäuse | 144-LQFP (20x20 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Terminal Form | Gull Wing | — |
| Package Shape | Square (LFQFP) | — |
| ADC Resolution | 10-bit | — |
| Temperature Grade | Automotive | — |
| Qualification | AEC-Q100 | — |
| Instruction Set Compatibility | Upward compatible with HCS12 | — |
| External Bus Interface | Yes (144-pin LQFP option) | — |
| Target Application Domain | Automotive multiplexing | — |
| Lebenszyklusstatus | NRND (Not Recommended for New Designs) | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| EEPROM | — | 2 KB |
| Number of I/O Pins | — | 91 |
| Gehäuse / Bauform | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Betriebstemperatur | — | -40 C to +125 C (automotive) |
| MSL-Level | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| RoHS-Status | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |