MMA1260EGR2 vs MMA1250EGR2 Comparison

Detailed side-by-side comparison of MMA1260EGR2 by NXP Semiconductors and MMA1250EGR2 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MMA1250EGR2 MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP

MMA1250EGR2 ⚠ Last Time Buy

Specification Comparison

Parameter MMA1260EGR2 MMA1250EGR2
Brand NXP Semiconductors NXP Semiconductors
Category Motion Sensors Motion Sensors
Lifecycle Status NRND Last Time Buy
Stock Status In Stock In Stock
Unit Price (USD) $5.20 $2.85
Sensor Type Accelerometer Accelerometer
Sensing Axis Z —
Acceleration Range ±1.55 g —
Sensitivity 1140 mV/g to 1260 mV/g [DATA_NEEDED: sensitivity in mV/g]
Bandwidth 50 Hz (2-pole low-pass filter) 50 Hz (internal 2-pole low-pass filter)
Supply Voltage 5.0 V (nominal) 5.0 V nominal (per legacy MMA1250 datasheet typical conditions)
Output Type Analog voltage (ratiometric) Analog, ratiometric
Output at 0 g 2.5 V (nominal, ratiometric) —
Self-Test Yes (electrostatic force activation) —
Package 16-pin SOIC (SOG) 16-SOIC (SOP-16), surface mount
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] -40 C to +85 C (industrial grade)
Supply Current [DATA_NEEDED: typical supply current] [DATA_NEEDED: quiescent current in mA]
Zero-g Offset Drift [DATA_NEEDED: zero-g offset over temperature] —
RoHS Status Compliant (per distributor listings) [DATA_NEEDED: confirm per NXP product page]
Axis — Z (perpendicular to package top)
Full-Scale Range — ±5 g
Zero-g Output — Approximately Vdd/2 (ratiometric)
Sensor Technology — Micromachined silicon capacitive
Internal Features — Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test

Datasheets & Resources

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