MMA1260EGR2 vs MMA1250EGR2 Comparación
Comparación detallada lado a lado de MMA1260EGR2 por NXP Semiconductors y MMA1250EGR2 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP
MMA1250EGR2 ⚠ Última compraComparación de especificaciones
| Parámetro | MMA1260EGR2 | MMA1250EGR2 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Motion Sensors | Motion Sensors |
| Estado del ciclo de vida | NRND | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,20 | $2,85 |
| Tipo de sensor | Accelerometer | Accelerometer |
| Sensing Axis | Z | — |
| Acceleration Range | ±1.55 g | — |
| Sensitivity | 1140 mV/g to 1260 mV/g | [DATA_NEEDED: sensitivity in mV/g] |
| Bandwidth | 50 Hz (2-pole low-pass filter) | 50 Hz (internal 2-pole low-pass filter) |
| Tensión de alimentación | 5.0 V (nominal) | 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) |
| Tipo de salida | Analog voltage (ratiometric) | Analog, ratiometric |
| Output at 0 g | 2.5 V (nominal, ratiometric) | — |
| Self-Test | Yes (electrostatic force activation) | — |
| Encapsulado | 16-pin SOIC (SOG) | 16-SOIC (SOP-16), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40 C to +85 C (industrial grade) |
| Corriente de alimentación | [DATA_NEEDED: typical supply current] | [DATA_NEEDED: quiescent current in mA] |
| Zero-g Offset Drift | [DATA_NEEDED: zero-g offset over temperature] | — |
| Estado RoHS | Compliant (per distributor listings) | [DATA_NEEDED: confirm per NXP product page] |
| Axis | — | Z (perpendicular to package top) |
| Full-Scale Range | — | ±5 g |
| Zero-g Output | — | Approximately Vdd/2 (ratiometric) |
| Sensor Technology | — | Micromachined silicon capacitive |
| Internal Features | — | Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test |