MMA1260EGR2 vs MMA1250EGR2 Comparaison
Comparaison détaillée côte à côte de MMA1260EGR2 par NXP Semiconductors et MMA1250EGR2 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MMA1250EGR2 - ±5g Z-Axis Micromachined Accelerometer | NXP
MMA1250EGR2 ⚠ Dernier achatComparaison des spécifications
| Paramètre | MMA1260EGR2 | MMA1250EGR2 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motion Sensors | Motion Sensors |
| Statut du cycle de vie | NRND | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,20 | $2,85 |
| Type de capteur | Accelerometer | Accelerometer |
| Sensing Axis | Z | — |
| Acceleration Range | ±1.55 g | — |
| Sensitivity | 1140 mV/g to 1260 mV/g | [DATA_NEEDED: sensitivity in mV/g] |
| Bandwidth | 50 Hz (2-pole low-pass filter) | 50 Hz (internal 2-pole low-pass filter) |
| Tension d'alimentation | 5.0 V (nominal) | 5.0 V nominal (per legacy MMA1250 datasheet typical conditions) |
| Type de sortie | Analog voltage (ratiometric) | Analog, ratiometric |
| Output at 0 g | 2.5 V (nominal, ratiometric) | — |
| Self-Test | Yes (electrostatic force activation) | — |
| Boîtier | 16-pin SOIC (SOG) | 16-SOIC (SOP-16), surface mount |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | -40 C to +85 C (industrial grade) |
| Courant d'alimentation | [DATA_NEEDED: typical supply current] | [DATA_NEEDED: quiescent current in mA] |
| Zero-g Offset Drift | [DATA_NEEDED: zero-g offset over temperature] | — |
| Statut RoHS | Compliant (per distributor listings) | [DATA_NEEDED: confirm per NXP product page] |
| Axis | — | Z (perpendicular to package top) |
| Full-Scale Range | — | ±5 g |
| Zero-g Output | — | Approximately Vdd/2 (ratiometric) |
| Sensor Technology | — | Micromachined silicon capacitive |
| Internal Features | — | Signal conditioning, 2-pole low-pass filter, temperature compensation, self-test |